Designed for general−purpose switching and amplifier applications. Collector−Emitter Saturation Voltage −. Excellent Safe Operating Area. DC Current Gain hFE = ~ 1at IC = 4. COMPLEMENTARY SILICON POWER TRANSISTORS s. STMicroelectronics PREFERRED.
NPN transistor mountend in TO-2plastic package. It is intented for power switching. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications. Parameters and Characteristics.
Low collector-emitter saturation voltage. The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and . Similar to BJTs, the current flow between the collector and the emitter of is controlled by the current flow through the base. Power Transistors are transistors which can handle a lot more power in compared to BJTs.
Vérifiez notre large offre. Moyenne des commentaires client, Soyez la première personne à écrire un commentaire sur cet article. Date de mise en ligne sur Amazon. Tension: 1V Intensité: A Polarité: NPN Boîtier: TO247.
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View datasheets, check stock and pricing, and search for GP BJT. Detalhes: Escrito por Newton C Braga. Suas características são praticamente as mesmas exceto pela potência máxima de dissipação que é um pouco menor.
Na tabela abaixo a pinagem e as . You might need to add more transistors to divide the heat. FREE DELIVERY possible on eligible purchases.