Ces deux transistors peuvent être intégrés dans un même boîtier. This configuration gives a much higher current gain than each transistor taken separately. Designed for general−purpose amplifier and low frequency switching applications.
NPN DARLINGTON POWER MODULE s. Darlington Complementary.
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Get an idea about darlington transistor as switch and its applications.
Current – Collector (Ic) (Max), 5A. Voltage – Collector Emitter Breakdown (Max), 60V. Commandez TIP1maintenant ! Medium Power Linear Switching Applications. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Features: D Collector-Emitter Sustaining Voltage:.
Transistor (BJT) – Discrêt STMicroelectronics TIP120 . See MPSAfor characteristics. TA = 25°C unless otherwise noted. Operating and Storage Junction Temperature . The device consists of eight NPN. The collector-current rating of each.
If you use high side sourcing switches it is most typical that then the control signal needs translation down to a GND referenced signal domain. These days when MCUs are controlling almost everything the . Semelab assumes no responsibility for . This device is designed for applications requiring extremely high current gain at currents to 1.